Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes

Journal of Applied Physics

Volumn 97, Issue 7, 2005, Pages

  Milosavljevic M ^a,b   Shao, G ^a   Lourenco, M A ^a   Gwilliam, R M ^a   Homewood, K P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIFFUSION; ENERGY GAP; FABRICATION; ION IMPLANTATION; LIGHT EMISSION; LIGHT EMITTING DIODES; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; ULSI CIRCUITS; VECTORS;

DISLOCATION LOOPS; ELECTRONIC BAND GAP; ION ENERGY; TRANSIENT-ENHANCED DIFFUSION (TED);

DISLOCATIONS (CRYSTALS);

EID: 17444373891     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1866492     Document Type: Article

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