TEM studies of dislocation-based silicon light emitting devices

Institute of Physics Conference Series

Volumn 179, Issue , 2004, Pages 99-102

  Milosavljevic M ^a   Lourenco, M A ^a   Siddiqui, M S A ^a   Shao, G ^a   Gwilliam, R M ^a   Homewood, K P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; HEAT TREATMENT; IMAGING TECHNIQUES; ION BEAMS; ION IMPLANTATION; IRRADIATION; LIGHT EMITTING DIODES; RAPID THERMAL ANNEALING; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

BURGERS VECTORS; END OF RANGE (EOR); ION ENERGY; RADIATIVE TRANSITIONS;

SILICON;

EID: 5044235125     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Wai Lek Ng, Lourenco M A, Gwilliam R M, Ledain S, Shao G and Homewood K P 2001 Nature 410, 192-194
2. Lourenco M A, Siddiqui M S A, Shao G, Gwilliam R M and Homewood K P 2003 Towards the First Silicon Lasers, Pavesi L et al. eds. (Netherlands: Kluwer Academic Publishers) 11-20
3. Ziegler J F, Biersak J P and Littmark U 1985 The Stopping and Range of Ions in Solids (New York: Pergamon)
4. Pan G Z, Tu K N and Prussin A 1997 J. Appl. Phys. 81 78-84
5. Webb R P 1991 in Practical Surface Analysis eds. M.Seah and D.Briggs, (New York: John Willey) vol 3 app 3; SUSPRE is available online at: http://www.ee.surrey.ac.uk/SCRIBA/simulations/Suspre/