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Volumn 60, Issue 7, 1999, Pages 4800-4809

Reactive deposition epitaxy of CoSi2 nanostructures on Si(001): Nucleation and growth and evolution of dots during anneal

Author keywords

[No Author keywords available]

Indexed keywords


EID: 17144386284     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.4800     Document Type: Article
Times cited : (51)

References (45)
  • 2
    • 0005686961 scopus 로고    scopus 로고
    • A. G. Cullisand J. L. Hutchison, Institute of Physics Conference Series, Institute of Physics, London
    • R. T. Tung, and K. Inoue, in Microscopy of Semiconducting Materials, edited by A. G. Cullisand J. L. Hutchison, Institute of Physics Conference Series, Vol. 157 (Institute of Physics, London, 1997), p. 487.
    • (1997) Microscopy of Semiconducting Materials , vol.157 , pp. 487
    • Tung, R.T.1    Inoue, K.2
  • 38
    • 85038990793 scopus 로고    scopus 로고
    • private communication
    • J. Tersoff (private communication).
    • Tersoff, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.