Nucleation and growth of CoSi2 on Si(100) studied by scanning tunneling microscopy

Surface Science

Volumn 372, Issue 1-3, 1997, Pages 71-82

  Scheuch, V ^a   Voigtlander B ^a   Bonzel, H P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Epitaxy; Growth; Low index single crystal surfaces; Nucleation; Scanning tunneling microscopy; Silicides

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; MASS TRANSFER; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SILICON COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE; THREE DIMENSIONAL;

ISLAND CLUSTERS; REACTIVE DEPOSITION EPITAXY; SILICIDES; SURFACE RECONSTRUCTION; TWO DIMENSIONAL;

SILICON;

EID: 0031077024     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01132-6     Document Type: Article

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