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Volumn 372, Issue 1-3, 1997, Pages 71-82
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Nucleation and growth of CoSi2 on Si(100) studied by scanning tunneling microscopy
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Author keywords
Epitaxy; Growth; Low index single crystal surfaces; Nucleation; Scanning tunneling microscopy; Silicides
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Indexed keywords
CRYSTAL GROWTH;
CRYSTAL LATTICES;
CRYSTAL ORIENTATION;
DEPOSITION;
EPITAXIAL GROWTH;
MASS TRANSFER;
NUCLEATION;
SCANNING TUNNELING MICROSCOPY;
SILICON COMPOUNDS;
SUBSTRATES;
SURFACE STRUCTURE;
THREE DIMENSIONAL;
ISLAND CLUSTERS;
REACTIVE DEPOSITION EPITAXY;
SILICIDES;
SURFACE RECONSTRUCTION;
TWO DIMENSIONAL;
SILICON;
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EID: 0031077024
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(96)01132-6 Document Type: Article |
Times cited : (66)
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References (33)
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