Oxygen and carbon clustering in Cz-Si during electron irradiation at elevated temperatures

Solid State Phenomena

Volumn 69, Issue , 1999, Pages 297-302

  Lindstrom J L ^a   Hallberg, T ^b   Hermansson, J ^a   Murin, L I ^c   Markevich, V P ^c   Kleverman, M ^a   Svensson, B G ^d  

^a LUND UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DIMERS; ELECTRON IRRADIATION; OXYGEN;

VACANCY-OXYGEN DEFECTS;

SEMICONDUCTING SILICON;

EID: 0032639223     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.69-70.297     Document Type: Article

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