The oxygen dimer in silicon: Some experimental observations

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 361-366

  Hallberg, T ^a   Lindstrom J L ^a   Murin, L I ^b   Markevich, V P ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

Annealing; Binding energy; Oxygen dimer; Silicon; Vibrational frequencies

Indexed keywords

ANNEALING; BAND STRUCTURE; BINDING ENERGY; MOLECULAR VIBRATIONS; OXYGEN;

ISOTOPICAL SHIFTS; OXYGEN DIMERS; VIBRATIONAL FREQUENCIES;

SEMICONDUCTING SILICON;

EID: 3743062557     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.361     Document Type: Article

References (26)

1. U. Gösele and T.Y. Tan, Appl. Phys. A 28, 79 (1982).
2. T.Y. Tan, R. Kleinhenz and C.P. Schneider, Mat. Res. Soc. Symp. Proc. 59, 195 (1986).
3. L. C. Snyder, J. W. Corbett, P. Deák, and R. Wu, Mater. Res. Soc. Symp. Proc. 104, 179 (1988).
4. P. J. Kelly, Mater. Sci. Forum 38-41, 269 (1989).
5. M. Needels, J. D. Joannopoulos, Y. Bar-Yam, and S. T. Pantelides, Phys. Rev. B 43, 4208 (1991).
6. D. J. Chadi, Phys. Rev. Lett. 77, 861 (1996).
7. C. P. Ewels, R. Jones, and S. Öberg, in Proceedings of the NATO Advanced Workshop on the Early Stages of Oxygen Precipitation in Silicon, Exeter,U.K., 1996, edited by R. Jones, NATO ASI Series, 3. High Technology Vol. 17 (Kluwer Academic Publishers, Dordrecht, 1996), p. 141.
8. S. A. McQuaid, M.J. Binns, C.A. Londos, J.H. Tucker, A.R. Brown and R.C. Newman, J. Appl. Phys. 77, 1427 (1995).
9. H. J. Stein and J. W. Medernach, J. Appl. Phys. 79, 2337 (1996).
10. E. Dittrich, W. Scheitler, and W. Eisenmenger, Jap. J. Appl. Phys. 26, Supplement 26-3, 873 (1987).
11. J. L. Lindström and T. Hallberg, Phys. Rev. Lett. 72, 2729 (1994).
12. J. L. Lindström and T. Hallberg, J. Appl. Phys. 77, 2684 (1995).
13. T. Hallberg and J. L. Lindström, J. Appl. Phys. 79, 7550 (1996).
14. J. L. Lindström and T. Hallberg, in Proceedings of the NATO Advanced Workshop on the Early Stages of Oxygen Precipitation in Silicon, Exeter,U.K., 1996, edited by R. Jones, NATO ASI Series, 3. High Technolodgy Vol. 17 (Kluwer Academic Publishers, Dordrecht, 1996), p. 41.
15. L. I. Murin and V. P. Markevich, in Proceedings of the NATO Advanced Workshop on the Early Stages of Oxygen Precipitation in Silicon, Exeter,U.K., 1996, edited by R. Jones, NATO ASI Series, 3. High Technolodgy Vol. 17 (Kluwer Academic Publishers, Dordrecht, 1996), p. 329.
16. L. I. Murin and V. P. Markevich, in Proceedings of the 7th International Conference on Shallow-Level Centers in Semiconductors, Amsterdam, 1996, edited by C. A. J. Ammerlaan and B. Pajot (World Scientific, Singapure, 1997), p. 339.
17. A. Baghdadi et al., J. Electrochem. Soc. 136, 2015 (1989).
18. R.C. Newman and J.B. Willis, J. Phys. Chem. Solids 26, 373 (1965).
19. A.R. Bean and R.C. Newman, J. Phys. Chem. Solids 33, 255 (1972).
20. B. Pajot and B. Gales, Mater. Res. Soc. Symp. Proc. 59, 39 (1986).
21. C. Herring and N. M. Johnson, in Hydrogen in Semiconductors, edited by J. I. Pankove and N. M. Johnson, Semiconductors and Semimetals Vol. 34 (Academic, San Diego, 1991), p. 225.
22. Y. Shirakawa, H. Yamada-Kaneta, and H. Mori, J. Appl. Phys. 77, 41 (1995).
23. P. Wagner and J. Hage, Appl. Phys. A 49, 123 (1989).
24. J.L. Lindström, T. Hallberg, D. Åberg, B.G. Svensson, L. Murin and V.P. Markevich, in this conference preceedings.
25. U. Gösele, K.-Y. Ahn, B.P.R. Marioton, T.Y. Tan and S.-T. Lee, Appl. Phys. A 48, 219 (1989).
26. Private communications with C. Ewels, R. Jones and S. Öberg.