Ferroelectric properties of sol-gel deposited Pb(Zr,Ti)O3/LaNiO3 thin films on single crystal and platinized-Si substrates

Materials Letters

Volumn 38, Issue 2, 1999, Pages 125-130

  Cho, C R ^a   Francis, L F ^a   Polla, D L ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

77.22.Ch; 77.80.Dj; 81.15.Lm; 82.80.Pv; 85.50.Na; Conductive oxide; Ferroelectric; Hysteresis loop; Pb(Zr, Ti)O3 LaNiO3 thin film; Sol gel; Surface states

Indexed keywords

COERCIVE FORCE; CONDUCTIVE FILMS; CRYSTAL MICROSTRUCTURE; DEPOSITION; FERROELECTRIC MATERIALS; LANTHANUM COMPOUNDS; PERMITTIVITY; POLARIZATION; SINGLE CRYSTALS; SOL-GELS; SUBSTRATES; THIN FILMS;

DISSIPATION FACTOR; REMNANT POLARIZATION;

DIELECTRIC FILMS;

EID: 0032712226     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(98)00145-1     Document Type: Article

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