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Volumn 581, Issue 2-3, 2005, Pages 236-240

In situ photoemission study on initial growth of HfO2 films on Si(1 0 0)

Author keywords

Insulating films; Semiconductor insulator interface; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

DEPOSITION; ELECTRON BEAMS; EVAPORATION; HAFNIUM COMPOUNDS; INSULATING MATERIALS; PHOTOELECTRON SPECTROSCOPY; SUBSTRATES; SYNCHROTRON RADIATION; THIN FILMS;

EID: 17044408014     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.02.040     Document Type: Article
Times cited : (12)

References (18)
  • 14
    • 0242496381 scopus 로고    scopus 로고
    • M. Kundu, N. Miyata, and M. Ichikawa J. Appl. Phys. 93 2003 1498; M. Copel, and M.C. Reuter Appl. Phys. Lett. 83 2003 3398.
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 3398
    • Copel, M.1    Reuter, M.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.