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Volumn 581, Issue 2-3, 2005, Pages 236-240
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In situ photoemission study on initial growth of HfO2 films on Si(1 0 0)
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Author keywords
Insulating films; Semiconductor insulator interface; Synchrotron radiation photoelectron spectroscopy
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Indexed keywords
DEPOSITION;
ELECTRON BEAMS;
EVAPORATION;
HAFNIUM COMPOUNDS;
INSULATING MATERIALS;
PHOTOELECTRON SPECTROSCOPY;
SUBSTRATES;
SYNCHROTRON RADIATION;
THIN FILMS;
BAND OFFSET;
INSULATING FILMS;
INTERFACE LAYERS;
SEMICONDUCTOR-INSULATOR INTERFACES;
FILM GROWTH;
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EID: 17044408014
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2005.02.040 Document Type: Article |
Times cited : (12)
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References (18)
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