Do dopant diffusion and drift decide semiconductor device degradation and dimension limits?

Solid State Ionics

Volumn 136-137, Issue , 2000, Pages 559-565

  Lubomirsky, Igor ^a,b   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b Engineering IV   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIFFUSION; ELECTRIC SPACE CHARGE; IONIC CONDUCTION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

MIXED ELECTRONIC-IONIC CONDUCTORS; SEMICONDUCTOR DEVICE MINIATURIZATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 16744367376     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-2738(00)00414-8     Document Type: Article

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