Dopant accumulation during substitutional-interstitial diffusion in semiconductors

Applied Physics Letters

Volumn 70, Issue 5, 1997, Pages 613-615

  Lyubomirsky, Igor ^a   Lyahovitskaya, Vera ^a   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001136061     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118290     Document Type: Article

References (12)

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