Bulk changes in semiconductors using scanning probe microscopy: nm-size fabricated structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 16, 1999, Pages 10877-10884

  Richter, Shachar ^a   Manassen, Yishay ^a   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000272095     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.10877     Document Type: Article

References (21)

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11. Monte Carlo simulations [based on a program written by E. Napchan, cf. E. Napchan, Rev. Phys. Appl.24, 15 (1989)] of an EBIC signal were performed to estimate the resolution.
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13. We used a Topometrix TMX2010 Discoverer AFM.
14. Philips 515 SEM. Standard working conditions for EBIC were 30 kV accelerating voltage 100 nm spot size and 0.5–1 nA beam current.
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