Study of the DC and RF degradation of Be-doped AlGaAs/GaAs HBTs under constant current stress

GaAs Reliability Workshop, Proceedings

Volumn , Issue , 1997, Pages 2-6

  Borgarino, M ^a   Menozzi, R ^a   Tasselli, J ^a   Marty, A ^a   Fantini, F ^a  

^a UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ENERGY GAP; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CONDUCTION BAND BARRIER; CURRENT STRESS; DUTY CYCLE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031388357     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)