Degradation of II-VI ZnSe-based single quantum well light-emitting devices

Critical Reviews in Solid State and Materials Sciences

Volumn 21, Issue 1, 1996, Pages 1-76

  Kim, J R ^a   Jones, Kevin S ^a  

^a University of Florida   (United States)

Author keywords

Dark line defects; Degradation; II VI lasers and LEDs

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; DEGRADATION; ELECTRIC FAULT CURRENTS; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); RELAXATION PROCESSES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; THERMAL DIFFUSION;

ATOMIC INTERDIFFUSION; BAND GAP; DARK LINE DEFECTS; DARK SPOT DEFECTS; DEFECT DENSITY; ELECTRICAL DEGRADATION; ELECTRICAL PUMPING; NONRADIATIVE RELAXATION; QUANTUM WELL LIGHT EMITTING DEVICES; ROOM TEMPERATURE;

LIGHT EMITTING DIODES;

EID: 0029755214     PISSN: 10408436     EISSN: None     Source Type: Journal    
DOI: 10.1080/10408439608241253     Document Type: Article

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