Dopant electromigration in semiconductors

Advanced Materials

Volumn 9, Issue 11, 1997, Pages 861-876

  Cahen, David ^a   Chernyak, Leonid ^a,b  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC FIELD EFFECTS; ELECTROMIGRATION; IONS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICE STRUCTURES;

DEVICE MINIATURIZATION; ELECTRONIC IONIC CONDUCTOR;

SEMICONDUCTOR DOPING;

EID: 0031551405     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.19970091104     Document Type: Article

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160. 2 and Si/Li or Si/Cu systems described here also yield frozen-in junctions, but are distinguished from the others by their self-regulation.
161. 2 and Si/Li or Si/Cu systems described here also yield frozen-in junctions, but are distinguished from the others by their self-regulation.
162. 2 and Si/Li or Si/Cu systems described here also yield frozen-in junctions, but are distinguished from the others by their self-regulation.
163. 2 and Si/Li or Si/Cu systems described here also yield frozen-in junctions, but are distinguished from the others by their self-regulation.
164. 2 and Si/Li or Si/Cu systems described here also yield frozen-in junctions, but are distinguished from the others by their self-regulation.