Fabrication of sub-μm bipolar transistor structures by scanning probe microscopy

Applied Physics Letters

Volumn 73, Issue 13, 1998, Pages 1868-1870

  Richter, Shachar ^a   Cahen, David ^a   Cohen, Sidney R ^a   Gartsman, Konstantin ^a   Lyakhovitskaya, Vera ^a   Manassen, Yishay ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005549936     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122309     Document Type: Article

References (21)

1. D. Cahen, J. M. Gilet, C. Schmitz, L. Chernyak, K. Gartsman, and A. Jakubowicz, Science 258, 271 (1992);
2. L. Chernyak, K. Gartsman, D. Cahen, and O. M. Stafsudd, J. Phys. Chem. Solids 56, 1165 (1995);
3. L. Chernyak, V. Lyahovitskaya, S. Richter, A. Jakubowicz, Y. Manassen, S. R. Cohen, and D. Cahen, J. Appl. Phys. 80, 2749 (1996);
4. L. Chernyak, Ph.D. thesis, Weizmann Institute, 1995.
5. M. Shur, Physics of Semiconductor Devices (Prentice-Hall, Englewood Cliffs, NJ, 1990).
6. Note that usual SPM nanolithography involves surface changes. For the few cases of SPM-induced bulk changes see: Y. Utsugi, Nature (London) 347, 747 (1990);
7. A. Sato and Y. Tsukamoto, 363, 431 (1993);
8. A. Sato, S. Momose, and Y. Tsukamoto, J. Vac. Sci. Technol. B 13, 2832 (1995).
9. V. Lyahovitskaya, S. Richter, Y. Manassen, and D. Cahen, Inst. Phys. Conf. Ser. 152, 103 (1998);
10. V. Lyahovitskaya, S. Richter, F. Frolow, L. Kaplan, Y. Manassen, K. Gartsman, and D. Cahen, J. Cryst. Growth (to be published).
11. A. Erickson, L. Sadwick, G. Neubauer, J. Kopanski, D. Anderton, and M. Rogers, J. Electron. Mater. 25, 301 (1996).
12. P. De Wolf, J. Snauwert, L. Hellams, T. Clarysse, W. Vandervost, M. D'Olieslager, and D. Quaeyhaegens, J. Vac. Sci. Technol. A 13, 1699 (1995).
13. We used a Scanning Capacitance Microscope, Digital Instruments, Santa Barbara, CA.
14. We used a Topometrix TMX2010 Discoverer, with conducting diamond tip (from R-Dec Co., Ltd., Japan), whose original apex diameter was ∼20 nm, based on scanning electron microscope (SEM) measurements.
15. H. K. Henisch, Semiconductor Contacts: An Approach to Ideas and Models (Clarendon, Oxford, 1984).
16. S. R. Cohen, G. Neubauer, and G. M. McClelland, J. Vac. Sci. Technol. A 8, 3449 (1990).
17. We used a Philips 515 SEM. Standard working conditions for EBIC were 30 kV accelerating voltage, 100 nm spot size, and 0.5-1 nA beam current.
18. Monte Carlo simulations [based on a program written by E. Napchan; cf., for example, E. Napchan, Rev. Phys. Appl. 24, 15 (1989)] of an EBIC signal were performed to estimate the resolution.
19. A. Rockett and R. W. Birkmire, J. Appl. Phys. 70, R81 (1991).
20. K. Gartsman, L. Chernyak, V. Lyahovitskaya, D. Cahen, V. Didik, V. Kozlovsky, R. Malkovich, E. Skoryatina, and V. Usacheva, J. Appl. Phys. 82, 4282 (1997).
21. For the phase diagram see: R. Herberholz, H. W. Schock, J. H. Werner, T. Haalboom, F. Ernst, C. Beilharz, K. W. Benz, and D. Cahen, Conference Record of the 26th IEEE PVSC 1997 (IEEE, Piscataway, NJ, 1997), pp. 323-327.