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Reviews of Modern Physics

Volumn 61, Issue 2, 1989, Pages 289-384

Point defects and dopant diffusion in silicon

(3) Fahey, P M a,b Griffin, P B a Plummer, J D a

a STANFORD UNIVERSITY (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33746343244 PISSN: 00346861 EISSN: None Source Type: Journal
DOI: 10.1103/RevModPhys.61.289 Document Type: Article

Times cited : (1299)

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