Enlargement of `location controlled' Si grains by dual-beam excimer-laser with bump structures

Applied Surface Science

Volumn 154, Issue , 2000, Pages 152-158

  Burtsev, A ^a   Ishihara, R ^a  

^a Delft Inst M   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; EXCIMER LASERS; GRAIN SIZE AND SHAPE; LASER BEAM EFFECTS; SEMICONDUCTING SILICON; SILICA; SINGLE CRYSTALS; SOLIDIFICATION; THERMAL GRADIENTS;

DUAL-BEAM EXCIMER LASERS;

THIN FILM TRANSISTORS;

EID: 0033877675     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00439-0     Document Type: Article

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