Manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers

IEEE Electron Device Letters

Volumn 20, Issue 5, 1999, Pages 212-214

  Goh, W L ^a,b   Raza, S H ^a   Montgomery, J H ^a   Armstrong, B M ^a   Gamble, H S ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TUNGSTEN COMPOUNDS;

BURIED METALLIC LAYERS; CARRIER LIFETIME; SILICON ON METAL ON INSULATOR; TUNGSTEN SILICIDE;

SEMICONDUCTOR DIODES;

EID: 0032649563     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.761018     Document Type: Article

References (5)

1. P. Saul, "The benefits of bonding silicon-on-insulator for bipolar IC's," IEE Rev., pp. 263-266, Nov. 1994.
2. A. Plettner, K. Haberger, A. Englmaier, H. Hartmann, and K. Neumeier, "Interconnect scheme for improved high-speed IC's," in Proc. IEDM, Dec. 1994, pp. 121-124.
3. W. L. Goh, D. L. Campbell, B. M. Armstrong, and H. S. Gamble, "Bured metallic layers with silicon direct bonding," in Spring Meet. Electrochem. Soc., May 1995, vol. 95-7, pp. 553-560.
4. R. Wilson, C. Quinn, B. McDonnell, S. Blackstone, and K. Yallup, "Bonded and trehched SOI with buried silicide layers," in Spring Meet. Electrochem. Soc., May 1995, vol. 95-7, pp. 535-542.
5. W. L. Goh, J. H. Montgomery, S. H. Raza, B. M. Armstrong, and H. S. Gamble, "Electrical characterization of dielectrically isolated silicon substrates containing buried metallic layers," IEEE Electron Device Lett., vol. 18, pp. 232-234, May 1997.