High-energy ion projection for deep ion implantation as a low cost high throughput alternative for subsequent epitaxy processes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 152-157

  Meijer, Jan ^a   Burchard, Bernd ^a   Ivanova, Katja ^b   Volland, Burkhard E ^b   Rangelow, Ivo W ^b   Rüb, Michael ^c   Deboy, Gerald ^d  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b UNIVERSITY OF KASSEL   (Germany)

^c INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^d INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; BOUNDARY CONDITIONS; COST EFFECTIVENESS; CRYOSTATS; DIFFUSION; MASKS; PHOSPHORUS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON WAFERS; SURFACE PROPERTIES; VACUUM APPLICATIONS;

FINE PATTERNING; HIGH-ENERGY IMPLANTATION;

ION IMPLANTATION;

EID: 1642288170     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1637917     Document Type: Conference Paper

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