Development of a continuously variable energy radio frequency quadrupole accelerator for SiC power semiconductor device fabrication

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 188, Issue 1-4, 2002, Pages 247-250

  Amemiya, Kensuke ^a,b   Ito, Junya ^b   Ohno, Toshiyuki ^a   Yasuda, Toshio ^a,b   Ohyanagi, Takasumi ^a,b   Watanabe, Atsuo ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Aluminum ion doping; High energy ion implantation; Junction field effect transistor; SiC power semiconductor devices; Variable energy radio frequency quadrupole

Indexed keywords

ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; HIGH ENERGY PHYSICS; ION IMPLANTATION; NATURAL FREQUENCIES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE;

SEMICONDUCTOR DEVICE FABRICATION;

PARTICLE ACCELERATORS;

EID: 0036534074     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01107-7     Document Type: Conference Paper

References (5)