Minority carrier tunneling and stress-induced leakage current for p+ gate MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 457-460

  Houtsma, V E ^a   Holleman, J ^a   Salm, C ^a   de Haan, I R ^a   Schmitz, J ^a   Widdershoven, F P ^a   Woerlee, P H ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS CAPACITORS; OXIDES; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; THICKNESS MEASUREMENT;

CAPACITANCE VOLTAGE CHARACTERISTICS; CURRENT VOLTAGE CONDUCTION MECHANISM; ESAKI-TSU TUNNELING FORMULA; GATE INJECTION; MINORITY CARRIER TUNNELING; STRESS INDUCED LEAKAGE CURRENT; TIME TO BREAKDOWN; VALENCE BAND TUNNELING;

ELECTRON TUNNELING;

EID: 0033315073     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)