Temperature dependence confirmation of tunneling through 2-6 nm silicon dioxide

Solid-State Electronics

Volumn 39, Issue 8, 1996, Pages 1143-1147

  Lundgren, P ^a   Andersson, M O ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; MATHEMATICAL MODELS; MOS DEVICES; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THERMAL EFFECTS;

FOWLER-NORDHEIM TUNNELING CURRENT; INTERNAL BIAS DISTRIBUTION; METAL TUNNEL OXIDE SILICON; TEMPERATURE DEPENDENCE; TUNNEL OXIDES;

ELECTRON TUNNELING;

EID: 0030211953     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00014-7     Document Type: Review

References (20)

1. P. V. Dressendorfer, Interface and electron tunneling properties of thin oxides on silicon, Ph.D. thesis, Yale University (1978).
2. K. R. Farmer, Defect dynamics and wear-out in thin silicon oxide dielectrics, Ph.D. thesis, Cornell University, Ithaca, New York (1990).
3. M. O. Andersson, Characterization and modeling of electrically active point defects in silicon/silicon dioxide structures, Ph.D. thesis, Technical Report no. 220, Chalmers University of Technology, Göteborg (1991).
4. M. Hirose, M. Hiroshima, T. Yasaka, M. Takakura and S. Miyazaki, Proc. INFOS '93, Microelectron. Engng 22, 3 (1993).
5. M. A. Green and J. Shewchun, Solid-St. Electron. 17, 349 (1974).
6. M. Depas, R. L. van Meirhaeghe, W. H. Laflere and F. Cardon, Solid-St. Electron. 37, 433 (1994).
7. J. Shewchun, R. Singh, D. Burk and F. Scholz, Appl. Phys. Lett. 35, 416 (1979).
8. R. Kies, C. Papadas, G. Pananakakis and G. Ghibaudo, Proc. ESSDERC '94 (Edited by C. Hill and P. Ashburn), p. 507. Editions Frontieres, Gif-sur-Yvette, France (1994).
9. N. M. Ravindra and J. Zhao, Smart Mater. Struct. 1, 197 (1992).
10. M. Lenzlinger and E. H. Snow, J. Appl. Phys. 40, 278 (1969).
11. B. Ricco, P. Olivo, T. N. Nguyen, T. S. Kuan and G. Ferriani, IEEE Trans. Electron Devices 35, 432 (1988).
12. 2 Interface (Edited by C. Helms and B. E. Deal), p. 497. Plenum, New York (1988).
13. P. Lundgren, M. O. Andersson and K. R. Farmer, J. Appl. Phys. 74, 4780 (1993).
14. K. R. Farmer, M. O. Andersson and O. Engström, Appl. Phys. Lett. 60, 730 (1992).
15. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology. Wiley, New York (1982).
16. M, Depas, R. L. van Meirhaeghe, W. H. Laflere and F. Cardon, Semicond. Sci. Technol. 7, 1476 (1992).
17. S. Zafar, Q. Liu and E. A. Irene, J. Vac. Sci. Technol. A 13, 47 (1995).
18. R. Stratton, J. Phys. Chem. Solids 23, 1177 (1962).
19. J. S. Blakemore, Semiconductor Statistics. Pergamon Press, Oxford (1962).
20. Z. A. Weinberg, J. Appl. Phys. 53, 5052 (1982).