Origin of photoluminescence peaks in Ge-SiO2 thin films

Science and Technology of Advanced Materials

Volumn 3, Issue 3, 2002, Pages 257-260

  Ye, C N ^a   Wu, X M ^a   Tang, N Y ^a   Zhuge, L J ^a   Yao, W G ^a   Chen, J ^b   Dong, Y M ^b   Yu, Y H ^b  

^a SOOCHOW UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Annealing temperature; Ge SiO2 thin films; Magnetron sputtering; Photoluminescence; Photoluminescence peak

Indexed keywords

ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM; LIGHT EMISSION; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SILICA; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

LIGHT EMITTING MATERIALS;

THIN FILMS;

EID: 0036613296     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1468-6996(02)00024-4     Document Type: Article

References (8)

1. 2 nanocrystals: The role of defects
2. y thin films on Si(100) substrates
3. Optically active oxygen-deficiency-related centers in amorphous silicon dioxide
4. 2 films on Si substrate
5. 2 matrix fabricated by atmospheric chemical vapor deposition
6. 2
7. Photoluminescence from anodized and thermally oxidized porous germanium
8. 2 matrix: Evidence in support of the quantum-confinement mechanism