A quantitative analysis of the shape transition of Ge islands on Si(100) with NC-AFM

Nanotechnology

Volumn 16, Issue 3, 2005, Pages

  Lin, K C ^a   Chiu, Y H ^a,b   Lin, J H ^b   Pai, Woei Wu ^b  

^a FU JEN CATHOLIC UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EVAPORATORS; GERMANIUM; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SILICON; STRAIN;

NON-CONTACT ATOMIC FORCE MICROSCOPY; SHAPE TRANSITION BARRIERS; STRAIN RELAXATION MODELS; SURFACE ENERGIES;

CHEMICAL ANALYSIS;

EID: 15844407524     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/3/012     Document Type: Conference Paper

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