Growth of vanadium-doped GaN by MOVPE

Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 57-63

  Souissi, M ^a   Bchetnia, A ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

A3. Metalorganic vapour phase epitaxy; B1. GaN; B1. Vanadium

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE; TRANSITION METALS; VANADIUM; X RAY DIFFRACTION;

GAN; INTRINSIC DEFECTS; LASER REFLECTOMETRY; VANADIUM TETRACHLORIDE;

GALLIUM NITRIDE;

EID: 15844399352     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.070     Document Type: Article

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