A study of deep levels in vanadium-doped GaAs grown by OMVPE

Semiconductor Science and Technology

Volumn 18, Issue 6, 2003, Pages 445-448

  Bchetnia, A ^a   Rebey, A ^a   Bourgoin, J C ^b   Eljani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON TRAPS; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CONDUCTION BANDS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0038171171     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/6/309     Document Type: Article

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