New vanadium dopant precursor for GaAs growth by metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 194, Issue 3-4, 1998, Pages 292-296

  Rebey, A ^a   Bchetnia, A ^a   Benjeddou, Ch ^b   El Jani, B ^a   Gibart, P ^c  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b University of Carthage   (Tunisia)

^c CRHEA CNRS   (France)

Author keywords

Hall effect; Vanadium doped GaAs; Vapor phase epitaxy

Indexed keywords

HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; VANADIUM COMPOUNDS;

VANADIUM CHLORIDE; VANADIUM DOPANT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032303811     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00726-X     Document Type: Article

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