Frenkel–kontorova model of vacancy–line interactions on Ga/Si(112)

Physical Review Letters

Volumn 83, Issue 9, 1999, Pages 1818-1821

  Erwin, S C ^a,d   Baski, A A ^b   Whitman, L J ^a   Rudd, R E ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4244032438     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.1818     Document Type: Article

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