Residual stress effects in doped barium strontium titanate thin films

Journal of the Electrochemical Society

Volumn 152, Issue 3, 2005, Pages

  Nothwang, W D ^a   Cole, M W ^a   Hubbard, C ^a   Ngo, E ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); PERMITTIVITY; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; THERMAL EXPANSION; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURE; BARIUM STRONTIUM TITANATE (BST); SILICON SUBSTRATES; STRESS MEASUREMENTS;

BARIUM COMPOUNDS;

EID: 15744387551     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1855851     Document Type: Article

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