Studies of effects of adsorption of silicon or germanium on the electronic states of (100) GaAs surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 12-16

  Miyamura, Satoshi ^a   Seto, Hiroki ^a   Inokuma, Takao ^a   Iiyama, Koichi ^a   Takamiya, Saburo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

DV X ; GaAs; Germanium; Silicon; Surface states

Indexed keywords

ADSORPTION; GERMANIUM; MOSFET DEVICES; PASSIVATION; PROBABILITY DENSITY FUNCTION; SILICON;

ATOMIC LAYERS; DISCRETE VARIATIONAL XΑ (DV XΑ); ELECTRONIC STATES; GAAS; SURFACE STATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 15544384309     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.12     Document Type: Article

References (16)

1. Y. Nannichi, J. F. Fan, N. Oigawa and A. Koma: Jpn. J. Appl. Phys. 27 (1988) L2367.
2. H. Kawanishi, H. Ohno, T. Morimoto, S. Kaneiwa, N. Miyauchi, H. Hayashi, Y. Akagi, Y. Nakajima and T. Hijikata: Ext. Abstr. 21st Conf. Solid State Devices and Materials, Tokyo, 1989, p. 337.
3. S. Morikita, T. Motegi and H. Ikoma: Jpn. J. Appl. Phys. 38 (1999) L1512.
4. M. Gasser and E. E. Latta: United States Patent 5 144 634 (Filed Aug. 1991).
5. K. Koyanagi, S. Kasai and H. Hasegawa: Jpn. J. Appl. Phys. 32 (1993) 502.
6. Y. G. Xie, S. Kasai, H. Takahashi, C. Jiang and H. Hasegawa: IEEE Electron Device Lett. 22 (2001) 312.
7. M. Passlack, J. K. Abrokwah, R. Droopad, Z. Yu, C. Overgaad, S. I. Yi, M. Hale, J. Sexton and A. C. Kummel: IEEE Electron Device Lett. 23 (2002) 508.
8. S. Miyamura, Y. Kasai, Y. Yamamura, T. Inokuma, K. Iiyama and S. Takamiya: Jpn. J. Appl. Phys. 42 (2003) 7244.
9. T. Ohno: Phys. Rev. B 44 (1991) 6306.
10. H. Seto, S. Miyamura, T. Inokuma, K. Iiyama and S. Takamiya: 16th Int. Conf. Indium Phosphide and Related Materials, 2004, Kagoshima (2004) p. 171.
11. W. E. Spicer, I. Lindau, P. Skeath and C. Y. Su: J. Vac. Sci. & Technol. 17 (1980) 1019.
12. N. C. Paul, K. Nakamura, M. Takebe, A. Takemoto, K. Iiyama, S. Takamiya, K. Higashimine, N. Ohtsuka, and Y. Yonezawa: Jpn. J. Appl. Phys. 42 (2003) 4264.
13. H. Hasegawa: Solid-State Electron. 41 (1997) 1441.
14. T. Tsuzuku, T. Sugimura, Y. Kasai, T. Inokuma, K. Iiyama and S. Takamiya: Jpn. J. Appl. Phys. 39 (2000) 5788.
15. M. P. Houng, Y. H. Wang, C. J. Huang, S. P. Huang and J. H. Horng: Solid-State Electron. 44 (2000) 1917.
16. H. Seto, S. Miyamura, T. Inokuma, K. Iiyama and S. Takamiya: Tech. Rep. IEICE, ED-2004-36 (2004-06) p. 7 [in Japanese].