Mechanical stress caused by adsorption of O or N on a Ga-terminated (100) GaAs surface: O gives compressive stress but N don't

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 171-174

  Seto, H ^a   Miyamura, S ^a   Inokuma, T ^a   Iiyama, K ^a   Takamiya, S ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPRESSIVE STRESS; DEFORMATION; OXIDATION; OZONE; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; X RAY PHOTOELECTRON SPECTROSCOPY;

ADSORPTION SITES; CHALCOGEN ATOMS; FIRST PRINCIPLE CALCULATIONS; NITRIDATION;

ADSORPTION;

EID: 23744460741     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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