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Volumn 42, Issue 12, 2003, Pages 7244-7249

Oxygen and Sulfur Adsorption Effects on Electronic States of GaAs(100) Surfaces Studied with Discrete Variational Xα Method

Author keywords

Chalcogen adsorption; DV X ; GaAs; Molecular orbital calculation; Surface states

Indexed keywords

ADSORPTION; ELECTRIC BREAKDOWN; ELECTRONIC STRUCTURE; ENERGY GAP; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; OXYGEN; SULFUR;

EID: 1242288013     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7244     Document Type: Article
Times cited : (8)

References (17)
  • 7
    • 1242341042 scopus 로고    scopus 로고
    • United States Patent 5 144 634 (Filed Aug. 1991)
    • M. Gasser and E. E. Latta: United States Patent 5 144 634 (Filed Aug. 1991).
    • Gasser, M.1    Latta, E.E.2
  • 15
    • 1242341041 scopus 로고    scopus 로고
    • Gaussian98W: Gaussian, Inc. (1998)
    • Gaussian98W: Gaussian, Inc. (1998).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.