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Volumn 44, Issue 1 A, 2005, Pages 108-113

Formation of NiSi-silicided p+n shallow junctions by BF 2+ implantation into/through suicide and rapid thermal annealing

Author keywords

Agglomeration; NiSi; Shallow junction; Suicide; Thermal stability

Indexed keywords

AGGLOMERATION; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ION IMPLANTATION; NICKEL COMPOUNDS; OXIDATION; RAPID THERMAL ANNEALING; SILICON WAFERS; THERMODYNAMIC STABILITY;

EID: 15544380333     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.108     Document Type: Article
Times cited : (3)

References (31)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.