Performance and manufacturability of the Co/Ti (cap) silicidation process for 0.25 μm MOS-technologies

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 99-101

  Lauwers, A ^a   Besser, P ^b   De Potter, M ^a   Kondoh, E ^a   Roelandts, N ^a   Steegen, A ^a   Stucchi, M ^a   Maex, K ^c  

^a IMEC   (Belgium)

^b ADVANCED MICRO DEVICES   (United States)

^c Katholieke Universitieit   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

SILICIDES;

FORMATION PROCESS; LATERAL GROWTH; MANUFACTURABILITY; MOS TECHNOLOGY; NARROW LINES; PROCESS WINDOW; SILICIDATION PROCESS; SINGLE LAYER;

NITROGEN COMPOUNDS;

EID: 33646221233     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704762     Document Type: Conference Paper

References (4)

1. A. C. Berti, V. Bolkhovsky, VMIC 1992
2. Q. Wang, K. Maex et alVLSI Technology Symposium Kyoto, 1995
3. K. Maex, 1. De Wolf, D. Howard, A. Steegen and A. Lauwers 4th Intemational Workshop on Stress induced Phenomena in Metallization, to be published
4. M. Yoshimaru, T. Yoshie, M. Kageyama, K. Shimokawa, Y. Fukuda, H. Onoda and M. Ino, IEEE 1995