Epitaxial Pb(Zr,Ti)O 3 capacitors on Si by liquid delivery metalorganic chemical vapor deposition

Journal of Electroceramics

Volumn 14, Issue 1, 2005, Pages 37-44

  Yang, S ^a   Liu, B ^a   Ouyang, J ^a   Nagarajan, V ^a   Kulkarni, V N ^a   Ramesh, R ^a   Kidder, J ^b   Droopad, R ^c   Eisenbeiser, K ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b Vermont Technical College   (United States)

^c MOTOROLA INC   (United States)

Author keywords

Liquid delivery MOCVD; LSCO PZT LSCO capacitors; PZT; SrTiO 3 template layer; Zr(dmhd) 4

Indexed keywords

LEAD ZIRCONATE TITANATE (PZT); LIQUID DELIVERY MOCVD; LSCO/PZT/LSCO CAPACITORS; SRTIO3 TEMPLATE LAYERS; ZR(DMHD)4;

EPITAXIAL GROWTH; FERROELECTRIC CERAMICS; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTROMECHANICAL DEVICES; PULSED LASER DEPOSITION; RANDOM ACCESS STORAGE; SILICON; SILICON WAFERS; THIN FILMS; ZIRCONIUM;

CAPACITORS;

EID: 15544369927     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-005-6582-4     Document Type: Article

References (30)

1. O. Auciello, J.F. Scott, and R. Ramesh, Physics Today, 22 (1998).
2. S. Aggarwal, A.M. Dhote, H. Li, S. Ankem, and R. Ramesh, Appl. Phys. Lett., 74, 230 (1999).
3. H.N. Al-Sharreef, B.A. Turtle, W.L. Warren, D. Dimos, and M.V. Raymond, Appl. Phys. Lett., 68, 272 (1996).
4. B.T. Liu, Z. Hao, Y.F. Chen, B. Xu, H. Chen, F. Wu, and B.R. Zhao, Yu. Kislinskii, and E. Stepantsov, Appl. Phys. Lett., 74, 2044 (1999).
5. T. Wu, S.B. Ogale, J.E. Garrison, B. Nagaraj, Amlan Biswas, Z. Chen, R.L. Greene, R. Ramesh, and T. Venkatesan, Phys. Rev. Lett., 86, 5998 (2001).
6. Ing-Shin Chen, Jeffrey F. Roeder, Dong-Joo Kim, Jon-Paul Maria, and Angus I. Kingon, J. Vac. Sci. Technol. B, 19, 1833 (2001).
7. S.A. Impey, Z. Huang, A. Patel, R. Beanland, N.M. Shorrocks, R. Watton, R. Watton, and R.W. Whatmore, J. Appl. Phys., 83, 2202 (1998).
8. T. Yamaguti, Proc. Phys. Math. Soc. Jpn., 17, 443 (1935).
9. R. Sato, J. Phys. Soc. Jpn., 6, 527 (1951).
10. M. Diara, Y. Arimoto, M. Jifuku, T. Kimura, S. Kodama, H. Yamawaki, and T. Yamaoka, J. Electrochem. Soc., 129, 2569 (1982).
11. U.S. Matsubara, N. Shohata, and M. Mikami, Jpn. J. Appl. Phys., Suppl., 24, 10 (1985).
12. R.A. McKee, F.J. Walker, and M.F. Chisholm, Phys. Rev. Lett., 81, 3014 (1998).
13. A. Lin, X. Hong, V. Wood, A.A. Verevkin, C.H. Ahn, R.A. Mckee, F. Walker, and E.D. Specht, Appl. Phys. Lett., 78, 2034 (2001).
14. K. Eisenbeiser, J.M. Finder, Z. Yu, J. Ramdani, J.A. Curless, J.A. Hall-mark, R. Droopad, W.J. Ooms, L. Salem, S. Bradshaw, and C.D. Over-gaard, Appl. Phys. Lett., 76, 1324 (2000).
15. Y. Wang, C. Ganpule, B.T. Liu, H. Li, K. Mori, B. Hill, M. Wuttig, R. Ramesh, J. Finder, Z. Yu, R. Droopad, and K. Eisenbeiser, Appl. Phys. Lett., 80, 97 (2000).
16. J.S. Hrowitz, K.S. Grabowski, K.B. Chrisey, and R.E. Leuchtner, Appl. Phys. Lett., 59, 1565 (1991).
17. R. Ramesh, T. Sands, and V.G. Keramidas, J. Electron. Mater., 23, 19 (1994).
18. H.N. Al-Shareff, K. Bellur, O. Auciello, and A.I. Kingon, Ferroelectrics, 152, 85 (1994).
19. Y. Shimizu, K.R. Udayakumar, and L.E. Cross, J. Am. Ceram. Soc., 74, 3023 (1991).
20. T. Fukami, I. Mimenmura, Y. Hiroshima, and T. Osada, Jpn. J. Appl. Phys., 130, 2155(1991).
21. C.M. Foster, R. Csencsits, G.R. Bai, Z. Li, L.A. Wills, R. Hiskes, H.N. Al-Shareef, and D. Dimos, Int. Ferroelectric, 10, 3 (1995).
22. M. De Keijser, P.J. Van Veldhoven, and G.J.M. Dormans, Mat. Res. Soc. Symp. Proc., 310, 223 (1993).
23. P.K. Larsen, G.J.M. Dormans, D.J. Taylor, and P.J. Van Veldhoven, J. Appl. Phys., 76, 2405 (1994).
24. V. Nagarajan, A. Stanishevsky, L. Chen, T. Zhao, B.T. Liu, J. Mehlgailis, A.L. Roytburd, and R. Ramesh, Appl. Phys. Lett., 81, 4215 (2002).
25. A.H. Carim, B.A. Turtle, D.H. Doughty, and S.L. Martinez, J. Am. Ceram. Soc., 74, 1455 (1991).
26. R. Ramesh, W.K. Chan, B. Wilkens, H. Gilchrist, T. Sands, J.M. Tarascon, V.G. Keramidas, D.K. Fork, J. Lee, and A. Safari, Appl. Phys. Lett., 61, 1537 (1992).
27. P. Muralt, J. Micromech. Microeng., 10, 136 (2000).
28. C.S. Ganpule, A. Stanishevsky, Q. Su, S. Aggarwal, J. Mengailis, E. Williams, and R. Ramesh, Appl. Phys. Lett., 75, 4091 (1999).
29. Dennis L. Polla and Lorraine F. Francis, Annu. Rev. Mater. Sci., 28, 563 (1998).
30. M.J. Haun, E. Furman, S.J. Jang, and L.E. Cross, Ferroelectrics, 99, 45 (1989).