Low temperature processing of Nb-doped Pb(Zr,Ti)O3 capacitors with La0.5Sr0.5CoO3 electrodes

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 272-274

  Al Shareef, H N ^a   Tuttle, B A ^a   Warren, W L ^a   Dimos, D ^a   Raymond, M V ^a   Rodriguez, M A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013456530     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115660     Document Type: Article

References (5)

1. R. Ramesh, H. Gilchrist, T. Sands, V. G. Keramidas, R. Haakenasen, and D. K. Fork, Appl. Phys. Lett. 63, 3592 (1993).
2. D. J. Lichtenwalner, R. Dat, O. Auciello, and A. I. Kingon, Ferroelectrics 152, 97 (1994).
3. W. L. Warren, D. Dimos, G. E. Pike, B. A. Tuttle, M. V. Raymond, R. Ramesh, and J. T. Evans, Appl. Phys. Lett. 67, 866 (1995).
4. R. W. Schwartz, R. A. Assink, and T. J. Headly, Mater. Res. Soc. Symp. Proc. 243, 245 (1993).
5. B. A. Tuttle, H. N. Al-Shareef, W. L. Warren, M. V. Raymond, T. J. Headly, J. A. Voigt, R. Ramesh, and J. Evans, Microelectronics Eng. B (to be published).