Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

Thin Solid Films

Volumn 479, Issue 1-2, 2005, Pages 17-23

  Kakiuchi, H ^a   Nakahama, Y ^b   Ohmi, H ^a   Yasutake, K ^a   Yoshii, K ^a   Mori, Y ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

Amorphous materials; Chemical vapor deposition; Plasma processing and deposition; Silicon nitride

Indexed keywords

AMORPHOUS MATERIALS; ATMOSPHERIC PRESSURE; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FREQUENCIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE;

CHEMICAL BONDING; DANGLING BOND; DEPOSITION PARAMETER; PLASMA PROCESSING AND DEPOSITION;

THIN FILMS;

EID: 15444378214     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.104     Document Type: Article

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