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Volumn 227-230, Issue PART 1, 1998, Pages 29-33
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a-Si:H deposited at high rate on the cathode of a rf-PECVD reactor
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Author keywords
Cathode film; Hydrogenated amorphous silicon; Plasma enhanced chemical vapor deposition reactor
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Indexed keywords
AMORPHOUS FILMS;
AMORPHOUS SILICON;
CATHODES;
CHEMICAL REACTORS;
CHEMICAL VAPOR DEPOSITION;
FILM GROWTH;
HYDROGENATION;
ION BOMBARDMENT;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);
SEMICONDUCTING SILICON;
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EID: 0032065080
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(98)00328-7 Document Type: Article |
Times cited : (9)
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References (18)
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