Structure and Electrical Properties of Sputter Deposited (Ba1-x,Srx) (Ti1-y,Zry)O3 Thin Films

Journal of the Electrochemical Society

Volumn 148, Issue 8, 2001, Pages

  Park, Sang Shik ^a   Yoon, Soon Gil ^b,c  

^a Kyungpook National University   (South Korea)

^b Chungnam National University   (South Korea)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1542778914     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1379951     Document Type: Article

References (15)

1. S. Yamamichi, A. Yamamichi, R. Park, T. King, and C. Hu, IEEE Trans. Electron Devices, 46, 342 (1999).
2. R. Moazzami, C. Hu, and W. H. Shepherd, IEEE Trans. Electron Devices, 39, 2044 (1992).
3. K. Sreenivas, A. Mansingh, and M. Sayer, J. Appl. Phys., 62, 4475 (1987).
4. S. Nam and H. Kim, J. Appl. Phys., 72, 2895 (1992).
5. T. Horikawa, N. Mikami, T. Takita, J. Tanimura, M. Kataoka, K. Suto, and M. Nunoshita, Jpn. J. Appl. Phys., Part 1, 32, 4126 (1993).
6. S. Park, J. Won, K. Lee, J. Choi, and C. Park, Jpn. J. Appl. Phys., Part 1, 35, 5757 (1993).
7. V. Mehrota, S. Kaplan, A. J. Sievers, and E. P. Giannelis, J. Mater. Res., 8, 1209 (1993).
8. Y. Takeshima, K. Shiratsuyu, H. Takagi, and Y. Sakabe, Jpn. J. Appl. Phys., Part 1, 36, 5870 (1997).
9. S. Hoffmann and R. Waser, Integr. Ferroelectr., 17, 141 (1997).
10. H. J. Shy and T. B. Wu. Jpn. J. Appl. Phys., Part 1, 37, 5638 (1998).
11. T. B. Wu, C. M. Wu, and M. L. Chen, Thin Solid Films, 334, 77 (1998).
12. I. C. HO, S. L. Fu, J. Mater. Sci., 25, 4699 (1990).
13. C. F. Yang, Jpn. J. Appl. Phys., Part 1, 36, 188 (1997).
14. E. S. Choi, J. C. Lee, J. S. Hwang, and S. G. Yoon, Jpn. J. Appl. Phys., Part 1, 38, 5317 (1999).
15. T. Li, P. Zawadski, R. A. Stall, S. Liang, and Y. Lu, Integr. Ferroelectr., 17, 127 (1997).