Dielectric and leakage current characteristics of Ba(Ti1-xZrx)O3 thin films deposited by rf magnetron sputtering

Thin Solid Films

Volumn 334, Issue 1-2, 1998, Pages 77-81

  Wu, Tai Bor ^a   Wu, Chii Ming ^a   Chen, Mei Ling ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Ba(Ti0.88Zr0.12)O3 (BTZ); Dielectric constant; Leakage current; Sputtering; Thin films

Indexed keywords

BARIUM TITANATE; CAPACITANCE; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PEROVSKITE; SPUTTER DEPOSITION; THIN FILMS;

BIASING VOLTAGE;

DIELECTRIC FILMS;

EID: 0032483915     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01120-1     Document Type: Article

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