Dielectric properties, leakage behaviour, and resistance degradation of thin films of the solid solution series Ba(Ti1-yZry)O3

Integrated Ferroelectrics

Volumn 17, Issue 1-4, 1997, Pages 141-152

  Hoffmann, Susanne ^a   Waser, Rainer M ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Ba(Ti,Zr)O3 thin films; Barium titanate zirconate; DRAMs; Integrated decoupling capacitors

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; COMPOSITION EFFECTS; DIELECTRIC RELAXATION; ELECTRIC FIELD EFFECTS; FILM GROWTH; LEAKAGE CURRENTS; MORPHOLOGY; RANDOM ACCESS STORAGE; SOLID SOLUTIONS; SUBSTRATES; THIN FILM CIRCUITS;

BARIUM TITANIUM ZIRCONATE; CHEMICAL SOLUTION DEPOSITION (CSD); INTEGRATED DECOUPLING CAPACITORS;

DIELECTRIC FILMS;

EID: 0031380794     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708012989     Document Type: Article

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