Diffusion and precipitation of oxygen in silicon doped with germanium

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 183-188

  Khirunenko, L I ^a   Pomozov, Yu V ^a   Shakhovtsov, V I ^a   Shumov, V V ^a  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

Germanium; Oxygen; Relative oxygen loss; Silicon; Thermal donor

Indexed keywords

DEFECTS; ISOTHERMAL ANNEALING; OXYGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON; TEMPERATURE; ANNEALING; DIFFUSION IN SOLIDS; MATHEMATICAL MODELS; PRECIPITATION (CHEMICAL); SEMICONDUCTING GERMANIUM;

FORMATION PROCESS; GERMANIUM CONTENTS; NON-MONOTONIC DEPENDENCE; OXYGEN IN SILICON; OXYGEN LOSS; POSSIBLE MECHANISMS; THEORETICAL MODELING; THERMAL DONOR;

GERMANIUM; SEMICONDUCTING SILICON;

THERMAL DONORS;

EID: 16944365596     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.183     Document Type: Article

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