Tin-vacancy complexes in e-irradiated n-type silicon

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 524-527

  Fanciulli, Marco ^a   Byberg, Jørgen R ^b  

^a LABORATORIO MDM   (Italy)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COOLING; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; ELECTRON IRRADIATION; PARAMAGNETIC RESONANCE; TIN;

FLOAT-ZONE SILICON;

SEMICONDUCTING SILICON;

EID: 0033312171     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00544-X     Document Type: Article

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