Radiation defects and carrier lifetime in tin-doped n-type silicon

Solid State Phenomena

Volumn 82-84, Issue , 2002, Pages 425-430

  Simoen, E ^a   Claeys, C ^a   Kraitchinskii, A M ^a   Kras'ko, M M ^a   Neimash, V B ^a   Shpinar, L I ^a  

^a IMEC   (Belgium)

Author keywords

Carrier lifetime; Deep level transient spectroscopy; Radiation defect; Silicon; Tin doping

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC PROPERTIES; IRRADIATION; MATHEMATICAL MODELS; PROTONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

CARRIER LIFETIME; RADIATION DEFECTS;

SEMICONDUCTING SILICON;

EID: 0036127958     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (16)