Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 4, 2004, Pages

  Johannesen, P ^a,c   Zakrzewski, A ^a,d   Vlasenko, L S ^a,e   Watkins, G D ^a   Usui, Akira ^b,f   Sunakawa, Haruo ^b,f   Mizuta, Masashi ^b  

^a LEHIGH UNIVERSITY   (United States)

^b NEC CORPORATION   (Japan)

^c DANFOSS A S   (Denmark)

^d INSTITUTE OF PHYSICS   (Poland)

^e IOFFE INSTITUTE   (Russian Federation)

^f FURUKAWA CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM;

ARGON LASER; ARTICLE; ELECTRON SPIN RESONANCE; ELECTRONICS; IRRADIATION; LASER; OPTICAL ROTATION; PHOTOLUMINESCENCE; SPECTRUM;

EID: 1542284044     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.045208     Document Type: Article

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