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Volumn 308-310, Issue , 2001, Pages 62-65
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A radiation-produced defect in GaN displaying hyperfine structure with three Ga atoms
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Author keywords
Ga interstitial; Ga vacancy; GaN; ODEPR
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Indexed keywords
ATOMS;
DEFECTS;
IRRADIATION;
NUCLEAR ENERGY;
RADIATION EFFECTS;
SEMICONDUCTING GALLIUM COMPOUNDS;
THERMAL EFFECTS;
HYPERFINE STRUCTURES;
GALLIUM NITRIDE;
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EID: 0035678848
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-4526(01)00651-2 Document Type: Article |
Times cited : (5)
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References (7)
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