Large Scale Production of Carbon Nanotube Transistors: A Generic Platform for Chemical Sensors

Materials Research Society Symposium - Proceedings

Volumn 776, Issue , 2003, Pages 271-277

  Gabriel, Jean Christophe P ^a  

^a Nanomix Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; CHEMICAL SENSORS; CHEMICAL VAPOR DEPOSITION; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; PROCESS CONTROL; SYNTHESIS (CHEMICAL);

CARBON NANOTUBE TRANSISTORS; NANOTUBE SENSORS;

CARBON NANOTUBES;

EID: 1542334531     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-776-q12.7     Document Type: Conference Paper

References (25)

1. a) Tans, S. J.; Verschueren, A. R. M.; Dekker, C. Nature 1998, 393, 49;
2. b) Martel, R.; Schmidt, T.; Shea, H. R.; Hertel, T.; Avouris, P. Appl. Phys. Lett. 1998, 73, 2447.
3. Collins P. G., Bradley K., Ishigami, Zettl A. Science 2000, 287, 1801.
4. Cui Y., Wei Q. Q., Park H. K., Lieber C. M. Science 2001, 293, 1289
5. Errachid A., Bausells J., Zine N., Jaffrezic H., Martelet C., Jaffrezic-Renault N., Charbonnier M. Mat. Science Eng. C 2002, 21, 9.
6. Fritz J., Baller M. K., Lang H. P., Rothuizen H., Vettiger P., Meyer E., Güntherodt H.-J., Gerber C., Gimzewski J. K. Science 2000, 285 316.
7. McKendry R., Zhang J., Arntz Y., Strunz T., Hegner M., Lang H. P., Baller M. K., Certa U., Meyer E., Güntherodt H.-J., Gerber C. Proc. Natl Acad. Sci. USA 2002, 99, 9783.
8. Hagleitner C., Hierlemann A., Lange D., Kummer A., Kerness N., Brand O., Baltes H., Nature 2001, 414, 293.
9. Star A., Gabriel J.-C. P., Bradley K., Grüner G. Nano Lett. 2003, 3, 459.
10. Chen, Y.; Ohlberg, D. A. A.; Li, X.; Stewart, D. R.; Williams, R. S.; Jeppesen, J. O.; Nielsen, K. A.; Stoddart, J. F.; Olynick, D. L.; Anderson, E. Appl. Phys. Lett. 2003, 82, 1610.
11. Besteman K., Lee J.-O, Wiertz F. G. M., Heering H. A., Dekker C. Nanoletters 2003, 3 ASAP:10.1021/nl034139u
12. Gabriel J.-C. P, Davidson P. Topic Curr. Chem. 2003, 226, 119.
13. Melosh N. A., Boukai A., Diana F., Gerardot B., Badolato A., Petroff P. M, Heath, J. R. Science 2003, 300, 112.
14. Pan, Z. W.; Xie, S. S.; Chang, B. H.; Wang, C. Y.; Lu, L.; Liu, W.; Zhou, W. Y.; Li, W. Z.; Qian, L. X. Nature 1998, 394, 631.
15. Li, W. Z.; Xie, S. S.; Qian, L. X.; Chang, B. H.; Zou, B. S.; Zhou, W. Y.; Zhao, R. A.; Wang G. Science 1996, 274, 1701.
16. Franklin N. R. Li Y. M. Chen R. J. Javey A. Dai H. J App. Phys. Lett. 2001, 79, 4571.
17. Cheung C. L. Kurtz A. Park H. Lieber C. M. J. Phys. Chem. B. 2002 106, 2429.
18. Kwan S., Sun C., Star A., Gabriel J.-C. P. to be submitted
19. Ong K. G., Zeng K., Grimes C A. IEEE Sensors Journal 2002, 2, 82.
20. Avouris P. Acc. Chem. Res., 2002, 35, 1026.
21. Dresselhaus M. S., Dresselhaus G., Jorio A., Souza Filho A. G., Pimenta M. A., Saito R. "Single Nanotube Raman Spectroscopy." Acc. Chem. Res., 2002, 35, 1070.
22. Fuhrer M. S., Nygard J., Shih L., Forero M., Yoon Y. G., Mazzoni M. S. C., Choi H. J., Ihm J., Louie S. G., Zettl A., McEuen P. L., Science 2000, 288, 494.
23. If the distribution is 1/3 metallic and 2/3 semiconducting nanotubes, as it is theoritically accepted, then the probability of having a metal-metal junction is only 0.11. Multiplication of the number of interconnects therefore greatly decrease the probability of having metallic electronic pathways.
24. Gabriel J.-C. P., Bradley K., Collins P. G., Patent Pending.
25. Bradley K., Cumings J., Star A., Gabriel J.-C. P., G. Grüner, Nano Lett. 2003, 3 639.