Electronic structure calculations of Si quantum dot: Effects of dimer formation and oxidation on electronic and optical properties

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 323, Issue 5-6, 2004, Pages 449-454

  Nishida, Masahiko ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

71.24.+q; 73.20.At; 78.55.Mb; 78.66.Db; Band edge states; Dimer formation and oxidation; Oscillator strength; Si quantum dot

Indexed keywords

ELECTRONIC STRUCTURE; NANOCRYSTALS; OPTICAL PROPERTIES; OXIDATION; SEMICONDUCTOR QUANTUM DOTS; SILICON;

71.24.+Q; 73.20.AT; 78.55.MB; 78.66.DB; BAND EDGE STATE; DIMER FORMATION; OSCILLATOR STRENGTHS; SI QUANTUM DOT;

DIMERS;

SILICON;

ARTICLE; CHEMICAL BINDING; CHEMICAL STRUCTURE; DIMERIZATION; MATHEMATICAL COMPUTING; OPTICS; OXIDATION; QUANTUM CHEMISTRY;

EID: 1542298963     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2004.02.024     Document Type: Article

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