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Volumn 58, Issue 11, 1998, Pages 7103-7112

Theoretical study of luminescence enhancement in oxidized Si(001) ultrathin films

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EID: 0001636915     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.7103     Document Type: Article
Times cited : (42)

References (41)
  • 2
    • 0029213836 scopus 로고
    • D. A. Grützmacher, E. F. Steigmeier, H. Auderset, R. Morf, B. Delley, and R. Wessicken, ibid., p. 833;
    • R. Tsu, J. Morais, and A. Bowhill, in Microcrystalline and Nanocrystalline Semiconductors, edited by L. Brus, M. Hirose, R. W. Collins, F. Koch, and C. C. Tsai, MRS Symposia Proceedings No. 358 (Materials Research Society, Pittsburgh, 1995), p. 825;D. A. Grützmacher, E. F. Steigmeier, H. Auderset, R. Morf, B. Delley, and R. Wessicken, ibid., p. 833;
    • (1995) Microcrystalline and Nanocrystalline Semiconductors , pp. 825
    • Tsu, R.1    Morais, J.2    Bowhill, A.3
  • 35
    • 0003685375 scopus 로고    scopus 로고
    • the present paper, the calculated longitudinal and transverse effective masses for electron at Δ minima are 0.58m and 0.28m, respectively, and the calculated effective masses for the heavy hole at the Γ point are 0.37m and 0.83m in the [001] and [111] directions, respectively
    • O. Madelung, Semiconductors-Basic Data (Springer, Berlin, 1996), p. 13;In the present paper, the calculated longitudinal and transverse effective masses for electron at Δ minima are 0.58m and 0.28m, respectively, and the calculated effective masses for the heavy hole at the Γ point are 0.37m and 0.83m in the [001] and [111] directions, respectively.
    • (1996) Semiconductors-Basic Data , pp. 13
    • Madelung, O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.