Effect of Surface Termination on the Electronic States in Nanocrystalline Porous Silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 589-592

  Matsumoto, Takahiro ^a   Arata, Goh ^b   Nair, Selvakumar V ^a   Masumoto, Yasuaki ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Deuterium; Hydrogen; Porous silicon; Quantum size effect; Tight binding; Trapping

Indexed keywords

ANODIC OXIDATION; DEUTERIUM; ELECTROCHEMISTRY; ENERGY GAP; ETCHING; HYDROGEN; NANOSTRUCTURED MATERIALS; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE;

QUANTUM SIZE EFFECTS;

POROUS SILICON;

EID: 0032607231     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.589     Document Type: Article

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